다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성

Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature

  • 발행 : 2006.07.12

초록

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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