대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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- Pages.2237-2238
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- 2006
슬러리 분산 및 pH가 Oxide CMP에 미치는 영향
Effects of Silica Slurry Dispersion and pH on the Oxide CMP
- Han, Sung-Min (Daebul Univ.) ;
- Park, Sung-Woo (Daebul Univ.) ;
- Lee, Woo-Sun (Chosun Univ.) ;
- Seo, Yong-Jin (Daebul Univ.)
- 발행 : 2006.07.12
초록
CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper,
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