대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2005년도 추계종합학술대회
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- Pages.611-614
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- 2005
Formation Temperature Dependence of Thermal Stability of Nickel Silicide with Ni-V Alloy for Nano-scale MOSFETs
- Tuya, A. (Dept. of Electronics Engineering, Chungnam National University) ;
- Oh, S.Y. (Dept. of Electronics Engineering, Chungnam National University) ;
- Yun, J.G. (Dept. of Electronics Engineering, Chungnam National University) ;
- Kim, Y.J. (Dept. of Electronics Engineering, Chungnam National University) ;
- Lee, W.J. (Dept. of Electronics Engineering, Chungnam National University) ;
- Ji, H.H. (Dept. of Electronics Engineering, Chungnam National University) ;
- Zhang, Y.Y. (Dept. of Electronics Engineering, Chungnam National University) ;
- Zhong, Z. (Dept. of Electronics Engineering, Chungnam National University) ;
- Lee, H.D. (Dept. of Electronics Engineering, Chungnam National University)
- 발행 : 2005.11.26
초록
In this paper, investigated is the relationship between the formation temperature and the thermal stability of Ni silicide formed with Ni-V (Nickel Vanadium) alloy target. The sheet resistance after the formation of Ni silicide with the Ni-V showed stable characteristic up to RTP temperature of