Effects of Surface Defect Distribution of $SiO_x(x{\le}2)$ Plates on Chemical Quenching
$SiO_x(x{\le}2)$ 플레이트의 표면 결함 분포가 화학 소염에 미치는 영향
- Published : 2005.10.06
Abstract
Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of
Keywords
- Thermal quenching;
- Chemical quenching;
- Ion implantation;
- AFM;
- XPS;
- Defect;
- Oxygen vacancy;
- Quenching distance