Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural evolution and electrical property of RF sputter-deposited ZnO:Al film by rapid thermal annealing process

RF sputter로 증착된 ZnO:Al 박막의 Rapid Thermal Annealing 처리에 따른 구조개선 및 전기적 특성

  • 박경석 (경성대학교 신소재공학과) ;
  • 이규석 (경성대학교 전기전자공학과) ;
  • 이성욱 (경성대학교 전기전자공학과) ;
  • 박민우 (경성대학교 신소재공학과) ;
  • 곽동주 (경성대학교 전기전자공학과) ;
  • 임동건 (충주대학교 전자공학과)
  • Published : 2005.07.07
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Abstract

Al doped zinc oxide films (ZnO:Al) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The as-deposited ZnO:Al films were rapid-thermal annealed. Electrical properties and structural evolution of the films, as annealed by rapid thermal process (RTP), were studied and compared with the films annealed by conventional annealing process. RTP, the (002) peak intensity increases and the electrical resistivity decreases by 20%, after RT annealing. The effects of RT annealing on the structural evolution and electrical properties of RF sputtered films were further discussed and compared also with the films deposited by DC magnetron sputtering.

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