Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
- /
- Pages.322-323
- /
- 2005
The study of ZnO crystalline improvement of FBAR
DC sputter로 증착한 ZnO 박막의 결정성 향상에 관한 연구
-
Lee, Kyu-Il
(Sung Kyun Kwan Univ.)
;
- Kim, Eung-Kwon (Sung Kyun Kwan Univ.) ;
- Lee, Tae-Yong (Sung Kyun Kwan Univ.) ;
-
Hwang, Hyun-Suk
(Sung Kyun Kwan Univ.)
;
- Song, Joon-Tae (Sung Kyun Kwan Univ.)
-
이규일
(성균관대학교 전자전기공학과)
;
- 김응권 (성균관대학교 전자전기공학과) ;
- 이태용 (성균관대학교 전자전기공학과) ;
-
황현석
(성균관대학교 전자전기공학과)
;
- 송준태 (성균관대학교 전자전기공학과)
- Published : 2005.07.07
Abstract
We deposited Zinc oxide (ZnO) thin films on Ru buffer layer in order to protect the amorphous layer between ZnO and Al interface. In X-ray diffraction (XRD) pattern, it was observed that increase of (002)-orientation by the variation of annealing treatment temperature. Also, surface roughness and specific resistance were increased by annealing treatment but full width at half maximum (FWHM) was decreased. In film bulk acoustic resonators (FBARs) fabricated from these results, we finally confirmed that the resonant frequency of 0.89 GHz without its shift was measured.