Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.149-150
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- 2005
Analysis of the relationship between breakdown voltage and defect of thyristor
사이리스터의 결함과 항복전압의 관계 분석
- Lee, Y.J. (Jinju National University) ;
- Seo, K.S. (KERI) ;
- Kim, H.W. (KERI) ;
- Kim, K.H. (KERI) ;
- Kim, S.C. (KERI) ;
- Kim, N.K. (KERI) ;
- Kim, B.C. (Jinju National University)
- 이양재 (진주산업대학교) ;
- 서길수 (한국전기연구원) ;
- 김형우 (한국전기연구원) ;
- 김기현 (한국전기연구원) ;
- 김상철 (한국전기연구원) ;
- 김남균 (한국전기연구원) ;
- 김병철 (진주산업대학교)
- Published : 2005.07.07
Abstract
Thyristor breakdown voltage variation acceleration aging test was investigated. The breakdown voltage was deceased after 1000 hours acceleration aging test. It temperature rising caused by electric field concentration at the edge beveling region of the thyristor was confirmed using Silvaco device simulation. The local temperature rising is driving force for the defect propagation. Consequently, propagated defects of the beveling region seems to decrease thyristor's breakdown voltage.