Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The n-p-n-p layer stacked color detector for CMOS image sensor

CMOS 이미지 센서용 n-p-n-p 적층형 색 검출기

  • Song, Young-Sun (Department of Electrical and Electronics Engineering, Yonsei University) ;
  • Yun, Il-Gu (Department of Electrical and Electronics Engineering, Yonsei University)
  • 송영선 (연세대학교 전기전자공학과) ;
  • 윤일구 (연세대학교 전기전자공학과)
  • Published : 2005.07.07
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Abstract

In this paper, the simulation of the n-p-n-p layer stacked color detector is presented. A color detector based on vertically integrated structures of silicon can overcome color moire or color aliasing effect. The color detector is designed to separate the fundamental chromatic components at each junction and exhibits maxima of the spectral sensitivity at red, green, and blue region, respectively. From this result, it is observed that the spectral response can be controlled by the doping concentration and structure of the devices.

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