Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Photocurrent of Single Silicon Nanowire Synthesized by Themical Chemical Vapor Deposition

기상합성법을 이용하여 합성한 단일 실리콘 나노선에 대한 광전류 측정

  • Kim, Kyung-Hwan (Department of Electrical Engineering Korea University) ;
  • Keem, Ki-Hyun (Department of Electrical Engineering Korea University) ;
  • Kang, Jeong-Min (Department of Electrical Engineering Korea University) ;
  • Yoon, Chang-Joon (Department of Electrical Engineering Korea University) ;
  • Jeong, Dong-Young (Institute for Nano Science Korea University) ;
  • Min, Byung-Don (Department of Electrical Engineering Korea University) ;
  • Cho, Kyung-Ah (Department of Electrical Engineering Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering Korea University) ;
  • Suh, Min-Chul (AT Group Tech. Development 1-Team Corporate R&D Center, Samsung SDI Company)
  • 김경환 (고려대학교 전기공학과) ;
  • 김기현 (고려대학교 전기공학과) ;
  • 강정민 (고려대학교 전기공학과) ;
  • 윤창준 (고려대학교 전기공학과) ;
  • 정동영 (고려대학교 중점연구소) ;
  • 민병돈 (고려대학교 전기공학과) ;
  • 조경아 (고려대학교 전기공학과) ;
  • 김상식 (고려대학교 전기공학과) ;
  • 서민철 (삼성SDI AT그룹 개발1팀 중앙연구소)
  • Published : 2005.07.07
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Abstract

Silicon(Si) nanowires have been grown by thermal chemical vapor deposition using the 20h ball-milled SiO powders under controlled conditions without the catalyst. For the synthesis of Si nanowires, $Al_2O_3$ substrates were used. Current-Voltage(I-V) and photoresponses were measured for the single Si nanowire in vacuum at room temperature. The light sources for these measurements were the 325 nm wavelength line from a He-Cd laser and the 633 nm wavelength line from a He-Ne laser. The intensity of the photoresponse is independent of the illumination time. And rise and decay times of the photoresponses are shorter than 1 sec.

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