한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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- Pages.1343-1346
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- 2005
Use of Self Assembled Monolayer in the Cathode/Organic Interface of Organic Light Emitting Devices for Enhancement of Electron Injection
- Manna, U. (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, H.M. (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Gowtham, M. (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Yi, J. (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Sohn, Sun-young (Department of physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University) ;
- Jung, Dong-Geun (Department of physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University)
- 발행 : 2005.07.19
초록
Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.
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