한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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- Pages.1310-1312
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- 2005
Triple Layer Passivation for Organic Thin-Film Transistors
- Ryoo, Ki-Hyun (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Lee, Cheon-An (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Jin, Sung-Hun (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Jung, Keum-Dong (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Park, Chang-Bum (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
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Lee, Jong-Duk
(Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
- Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
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Park, Byung-Gook
(Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
- 발행 : 2005.07.19
초록
Passivation of organic thin-film transistors (OTFTs) using organic and metal thin-film was presented. Parylene-C and titanium were used as an organic and metal layer, respectively. With the proposed passivation method the degradation of electric parameters of OTFTs was relieved compared with non-passivated devices. Several electric parameters such as on/off current, field-effect mobility, and threshold voltage were shown.
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