한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
- /
- Pages.1288-1290
- /
- 2005
The characteristics of Organic Thin Film Transistors with high-k dielectrics
- Kim, Chang-Su (Department of Metallurgical Engineering, Yonsei University) ;
- Kim, Woo-Jin (Department of Metallurgical Engineering, Yonsei University) ;
- Jo, Sung-Jin (Department of Metallurgical Engineering, Yonsei University) ;
-
Baik, Hong-Koo
(Department of Metallurgical Engineering, Yonsei University)
- 발행 : 2005.07.19
초록
We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.
키워드