한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.1033-1034
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- 2005
Development of High Aperture Ratio 2.1” QVGA LTPS (Low Temperature Poly Si) LCD Using SLS (Sequential Lateral Solidification) Technology
- Kang, Myung-Koo (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Lee, Joong-Sun (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Park, Jong-Hwa (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Zhang, Lintao (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Joo, Seung-Yong (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Kim, Chul-Ho (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Kim, Il-Kon (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Kim, Sung-Ho (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Park, Kyung-Soon (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Yoo, Chun-Ki (LTPS Team, Mobile Display Business Team, Samsung Electronics) ;
- Kim, Chi-Woo (LTPS Team, Mobile Display Business Team, Samsung Electronics)
- Published : 2005.07.19
Abstract
High resolution 2.1” QVGA LTPS LCD (190ppi) having high aperture ratio of 65% could be successfully developed using state-of-the-art SLS technology and active/gate storage structure. Cost effective P-MOS 6-Mask structure was used. Full gate and transmission gate circuits are integrated in the panel. The high aperture ratio was obtained by using active/gate capacitance structure, which can reduce storage capacitance area. The aperture ratio was increased to 65% from 49% of conventional gate/data capacitance structure. The brightness was increased from 180cd to 270cd without any degradation of optical properties such as contrast ratio, flicker or crosstalk.
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