한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.897-897
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- 2005
Quenching rate controlled Laser Annealing (QLA) for poly-Si TFT fabrication
- Han, Gyoo-W. (Production engineering Lab, Production engineering center, Samsung SDI) ;
- Alexander, Voronov (Production engineering Lab, Production engineering center, Samsung SDI) ;
- Ryu, S.G. (Production engineering Lab, Production engineering center, Samsung SDI) ;
- Kim, H.S. (Production engineering Lab, Production engineering center, Samsung SDI) ;
- Roh, C.L. (Production engineering Lab, Production engineering center, Samsung SDI)
- Published : 2005.07.19
Abstract
We report QLA (Quenching-rate controlled Laser Annealing) system as new concept using pulsed DPSSL and CW lasers. This process can control temperature quenching-rate of poly-Si crystallization by additional CW laser and fabricate high quality poly-Si with faster scanning speed than conventional processes. In this paper, QLA system, the experimental results and theoretical discussion will be introduced.
Keywords