한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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- Pages.496-498
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- 2005
Hafnium Oxide Nano-Film Deposited on Poly-Si by Atomic Layer Deposition
- Wei, Hung-Wen (Electronics Research & Service Organization, Industrial Technology Research Institute) ;
- Ting, Hung-Che (Electronics Research & Service Organization, Industrial Technology Research Institute) ;
- Chang, Chung-Shu (Electronics Research & Service Organization, Industrial Technology Research Institute)
- 발행 : 2005.07.19
초록
We reported that high dielectric hafnium oxide nano-film deposited by thermal atomic layer deposition on the poly-silicon film (poly-Si). The poly -Si film was produced by plasma enhanced chemical vapor deposition and excimer laser annealing. We used the hafniu m chloride (
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