한국정밀공학회:학술대회논문집 (Proceedings of the Korean Society of Precision Engineering Conference)
- 한국정밀공학회 2005년도 추계학술대회 논문집
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- Pages.506-508
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- 2005
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- 2005-8446(pISSN)
미세접촉프린팅 공정을 이용한 유연성 유기박막소자(OTFT)설계 및 제작
Design and Fabrication of Flexible OTFTs by using Nanocantact Printing Process
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Jo Jeong-Dai
(KIMM) ;
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Kim Kwang-Young
(KIMM) ;
-
Lee Eung-Sug
(KIMM) ;
-
Choi Byung-Oh
(KIMM) ;
- Esashi Masayoshi (Tohoku University)
- 발행 : 2005.10.01
초록
In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.
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