Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.305-306
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- 2005
Transport parameters in a-Se:As films for digital X-ray conversion material using the moving-photocarrier-grating technique
- Park, Chang-Hee (School of Computer Aided Science, Inje University) ;
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Kim, Jeong-Bae
(School of Computer Aided Science, Inje University)
;
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Kim, Jae-Hyung
(School of Computer Aided Science, Inje University)
;
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Nam, Sang-Hee
(Medical Image Research Lab., Inje University)
- Published : 2005.11.10
Abstract
The effects of As addition In amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As X-ray device. The fabricated a-Se (0.3%As) based X-ray detector exhibited the highest X-ray sensitivity of 5 samples.