한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

LiF 음극 버퍼층을 사용한 폴리머의 효율 향상에 관한 임피던스 분석

Impedance spectroscopy analysis of polymer light emitting diodes with the LiF buffer layer at the cathode/organic interface

  • 김현민 (성균관대학교 전자전기공학과) ;
  • 장경수 (성균관대학교 전자전기공학과) ;
  • 이준신 (성균관대학교 전자전기공학과) ;
  • 손선영 (성균관대학교 물리학과) ;
  • 박근희 (성균관대학교 물리학과) ;
  • 정동근 (성균관대학교 물리학과)
  • Kim, H.M. (School of Information and Communication Engineering, Sungkyunkwan Univ.) ;
  • Jang, K.S. (School of Information and Communication Engineering, Sungkyunkwan Univ.) ;
  • Yi, J. (School of Information and Communication Engineering, Sungkyunkwan Univ.) ;
  • Sohn, Sun-Young (Department of Physics, Sungkyunkwan Univ.) ;
  • Park, Kuen-Hee (Department of Physics, Sungkyunkwan Univ.) ;
  • Jung, Dong-Geun (Department of Physics, Sungkyunkwan Univ.)
  • 발행 : 2005.11.10
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초록

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).

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