대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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- Pages.71-73
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- 2005
소결온도에 따른 $Pb(Zr_{x}Ti_{1-x})O_3$ 이종층 후막의 구조적.전기적 특성
StructuralElectrtonic Properies of $Pb(Zr_{x}Ti_{1-x})O_3$ Heterolayerd Thick Films with Variation of Sintering Temperature
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Lee, Sung-Gap
(Gyeongsang National Univ.) ;
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Lee, Young-Hie
(Kwangwoon Univ.) ;
- Nam, Sung-Pil (Kwangwoon Univ.) ;
- Bae, Sun-Gi (Incheon Univ.)
- 발행 : 2005.11.04
초록
Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 mm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at
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