대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2005년도 학술대회 논문집 전문대학교육위원
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- Pages.165-168
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- 2005
GaAs MESFET의 채널전하에 의한 전기적 특성해석
Electrical Characteristics of GaAs MESFET's Considering Channel Charge
- Won, Chang-Sub (Dong-seoul College) ;
- Hong, Jea-Il (Dong-seoul College)
- 발행 : 2005.10.14
초록
In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.
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