Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2005.10a
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- Pages.165-168
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- 2005
Electrical Characteristics of GaAs MESFET's Considering Channel Charge
GaAs MESFET의 채널전하에 의한 전기적 특성해석
- Won, Chang-Sub (Dong-seoul College) ;
- Hong, Jea-Il (Dong-seoul College)
- Published : 2005.10.14
Abstract
In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.
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