한국반도체및디스플레이장비학회:학술대회논문집 (Proceedings of the Korean Society Of Semiconductor Equipment Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
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TOLED 용 ITO 음전극 제작 특성

  • 김현웅 (경원대학교 전기전자공학과) ;
  • 금민종 (경원대학교 전기전자공학과) ;
  • 서화일 (한국기술교육대학교 정보기술 공학부) ;
  • 김광선 (한국기술교육대학교 메카트로닉스 공학부) ;
  • 김경환 (경원대학교 전기전자공학과)
  • 발행 : 2005.09.01
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초록

The ITO thin films for Top-Emitting Organic Light Emitting Devices (TOLEDs) were prepared on cell(LiF/Organic Layer/Bottom Electrode : ITO ) by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying gas pressure, input current and distance of target to target($D_{T-T}$). As a function of sputtering conditions, I-V characteristics of prepared ITO thin films on cell were measured by 4156A (HP). In the results, when the In thin films were deposited at $D_{T-T}$ 70mm and working pressure 1mTorr, the leakage current of ITO/cell was about 11[V] and 5E-6[$mA/cm^2$].

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