한국반도체및디스플레이장비학회:학술대회논문집 (Proceedings of the Korean Society Of Semiconductor Equipment Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Plasma Assisted ALD 장비 계발과 PAALD법으로 증착 된 TaN 박막의 전기적 특성

Development of Plasma Assisted ALD equipment and electrical characteristic of TaN thin film deposited PAALD method

  • Do Kwan-Woo (School of electrical engineering, Kyungpook national University) ;
  • kim Kyoung-Min (School of electrical engineering, Kyungpook national University) ;
  • Yang Chung-Mo (School of electrical engineering, Kyungpook national University) ;
  • Park Seong-Guen (School of electrical engineering, Kyungpook national University) ;
  • Na Kyoung-Il (School of electrical engineering, Kyungpook national University) ;
  • Lee Jung-Hee (School of electrical engineering, Kyungpook national University) ;
  • Lee Jong-Hyun (School of electrical engineering, Kyungpook national University)
  • 발행 : 2005.05.01
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초록

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

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