SRAM소자의 SER 및 Latchup 신뢰성 연구

  • 이준하 (상명대학교 컴퓨터시스템공학과 정보디스플레이연구소) ;
  • 이흥주 (상명대학교 컴퓨터시스템공학과 정보디스플레이연구소) ;
  • 조현찬 (한국기술교육대학교 정보기술공학부) ;
  • 이강환 (한국기술교육대학교 정보기술공학부) ;
  • 권오근 (세명대학교 인터넷정보학부)
  • Published : 2005.05.01

Abstract

A soft error rate neutrons is a growing problem for integrated circuits with technology scaling. In the acceleration test with high-density neutron beam, a latch-up prohibits accurate estimations of the soft error rate (SER). This paper presents results of analysis for the latch-up characteristics in the circumstance corresponding to the acceleration SER test for SRAM. Simulation results, using a two-dimensional device simulator, show that the deep p-well structure has better latch-up Immunity compared to normal twin and triple well structures. In addition, it is more effective to minimize the distance to ground power compared with controlling a path to the $V_{DD}$ power.

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