비정질 CoFeSiB 합성형 반강자성 자유층을 갖는 MTJs의 자화스위칭특성

Magnetization Switching Characteristic of MTJs with Synthetic Antiferrornagnet Free Layers Consisting of Amorphous CoFeSiB

  • Hwang J. Y. (Department of Physics, Sookmyung Women's University) ;
  • Kim S. S. (Department of Physics, Sookmyung Women's University) ;
  • Kim M. Y. (Department of Physics, Sookmyung Women's University) ;
  • Rhee J. R. (Department of Physics, Sookmyung Women's University) ;
  • Chun B. S. (Department of Materials Science and Engineering, Korea University) ;
  • Kim Y. K. (Department of Materials Science and Engineering, Korea University) ;
  • Kim T. W. (Materials and Devices Laboratory, Samsung Advanced Institute of Technology) ;
  • Park W. J. (Materials and Devices Laboratory, Samsung Advanced Institute of Technology)
  • 발행 : 2005.06.01