Fabrication and Characterization of High Performance Planar Photodetectors on QW-FET Wafer

QW-FET 구조를 가진 고성능 평판형 광검출기의 제작 및 특성평가

Metal-Semiconductor-Metal type photodetector was fabricated with AlGaAs/InGaAs Quantum Well FET structures using simplified processing steps. The DC and RF responses were measured by 850nm wavelength injection laser. A DC responsivity in the quasisaturated regime was 0.45 A/W in CW measurements, and a bandwidth measured using a 850nm 40 ps pulsed laser was 16GHz. An electrical equivalent circuit model was extracted from measured S-parameter.