Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2005.07c
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- Pages.1865-1867
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- 2005
Effect of electrode material under frequency response characteristics of AIN based FBAR devices
AIN 체적탄성파 소자의 주파수 응답특성에 대한 전극재료의 영향
- Kim, Bo-Hyun (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
- Kim, Do-Ypung (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
- Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
- Published : 2005.07.18
Abstract
Film bulk acoustic resonator (FBAR) devices which adopt an air-gap type (metai/AlN/metal/air/substrate) configuration are fabricated by a novel process. The newly fabricated resonator doesn't employ any supporting layer below it. FBAR devices with the air-gap type are also fabricated using the conventional method. The frequency response characteristics of all the devices fabricated are measured and compared, in terms of the kinds of top and bottom electrode materials. The results show that the better device performance of FBAR devices can be achieved by employing the proposed process.
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