Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2005.07d
- /
- Pages.3019-3021
- /
- 2005
Over-Temperature Protection Circuit Modeling Using MOSFET Rds(on) Temperature-Resistance Characteristics
MOSFET Rds(on) 온도-저항 특성을 이용한 과열보호회로 모델링
- Choi, Nak-Gwon (Kyungnam University) ;
- Lee, Sang-Hoon (Kyungnam University) ;
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Kim, Hyoung-Woo
(KERI) ;
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Kim, Ki-Hyun
(KERI) ;
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Seo, Kil-Soo
(KERI) ;
-
Kim, Nam-Kyun
(KERI)
- Published : 2005.07.18
Abstract
In this paper we suggest a novel temperature detection method utilized in direct over-temperature protection circuit modeling. The suggested model detects temperature variation using Rds(on) characteristics of MOSFET, while the conventional methods are using extra devices such as a temperature sensor or an over-temperature detection transistor. The temperature-dependant MOSFET model is implemented using Spice ABM(Spice Analog Behavior Model). The direct over-temperature protection circuit was designed including it. We verified effectiveness of the temperature dependant Rds(on) model characteristics and performance of the direct over-temperature protection circuit on PSpice simulation
Keywords