Evaluation of interfacial toughness of film/substrate by nanoindenter

나노 압입자를 이용한 박막/모재 구조의 계면파괴인성치 평가

A method to measure the interfacial toughness of film/substrate by nanoindenter is proposed. As the thickness of the film decreases, the measurement of the interfacial toughness requires the more sophisticated equipment such as nanoindenter. In this study, the nanoindenter is applied to the substrate near the interface of film/substrate in the direction perpendicular to the normal of the interface, causing the cohesive fracture of the substrate, followed by the interfacial cracking. The specimen of Cu($0.56 {\mu}m$)/Si(530 ${\mu}$) are made by sputtering the copper onto the silicon wafer. By scratching the copper surface, we can make the easy interfacial cracking during the nanoindentation. It is found that the averaged values of the interfacial toughness of the Cu/Si is $0.664{\pm}0.3\;J/m^2$ . The phase angle of the specimen in this study is ${\psi}{\simeq}-36.8^{\circ}$, computed by the method of Suo and Hutchinson.[1]