한국산학기술학회:학술대회논문집 (Proceedings of the KAIS Fall Conference)
- 한국산학기술학회 2004년도 추계학술대회
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- Pages.203-205
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- 2004
SRAM 소자의 Cell Latch-up 현상 분석
Analysis of Cell Latch-up Effect in SRAM Device
- Lee Jun-Ha (Dept of Computer System Engineering, Information Display Research Center, Sangmyung University) ;
- Lee Hoong-Joo (Dept of Computer System Engineering, Information Display Research Center, Sangmyung University)
- 발행 : 2004.11.01
초록
A soft error rate neutrons is a growing problem for terrestrial integrated circuits with technology scaling. In the acceleration test with high-density neutron beam, a latch-up prohibits accurate estimations of the soft error rate (SER). This paper presents results of analysis for the latch-up characteristics in the circumstance corresponding to the acceleration SER test for SRAM. Simulation results, using a two-dimensional device simulator, show that the deep p-well structure has better latch-up immunity compared to normal twin and triple well structures. In addition, it is more effective to minimize the distance to ground power compared with controlling a path to the
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