Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dependence of luminescence property of ZnMgS:Mn thin film phosphor on RTA temperature

ZnMgS:Mn 박막 형광체의 RTA 온도 변화에 따른 발광 특성 의존성

  • Lee, Dong-Chin (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Yun, Sun-Jin (Basic Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Jeon, Duk-Young (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • 이동진 (한국과학기술원 신소재공학과) ;
  • 윤선진 (한국전자통신연구원 기반기술연구소) ;
  • 전덕영 (한국과학기술원 신소재공학과)
  • Published : 2004.05.06
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Abstract

With varying rapid thermal annealing (RTA) temperature, luminescent properties of ZnMgS:Mn thin film sputter-deposited with one target were measured. Although all samples have the same composition, $Zn_{1-x}Mg_xS:Mn$ (x=0.25) can emit luminescence between 580 and 614 nm, which is controlled by only RTA temperature. It is understood that the energy band gap shift of ZnMgS:Mn thin film phosphor occurs with varying RTA temperature.

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