Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.04b
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- Pages.42-45
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- 2004
Photoluminescent properties for CdTe crystal grown by Bridgman method
Bridgman 방법으로 성장된 CdTe의 광발광 특성
- Hong, Kwang-Joon (Department of Physics, Chosun University) ;
- You, Sang-Ha (Department of Physics, Chosun University)
- Published : 2004.04.24
Abstract
High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of {111}surfaces of CdTe etched by Nakagawa solution was observed the {111} A composed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on {111}A, we observed free exciton(
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