Condensation and Baking Effects of Polymer Gate Insulator for Organic Thin Film Transistor

  • Kang, S.I. (Department of Electrical, Information and Control Engineering, Hongik University) ;
  • Park, J.H. (Department of Electrical, Information and Control Engineering, Hongik University) ;
  • Jang, S.P. (Department of Electrical, Information and Control Engineering, Hongik University) ;
  • Choi, Jong-S. (Department of Electrical, Information and Control Engineering, Hongik University)
  • Published : 2004.08.23

Abstract

Performances of organic thin film transistors (OTFTs) can be detrimentally affected by the state of the gate dielectric. Because of the bad stability of polymers, OTFTs with polymer gate dielectrics often provide abnormal characteristics. In this study, we report the condensation effect of the polymer gate dielectric layer. For the observations of the effect of the condensation, the spin-coated polymer layers with various deposition conditions were fabricated and left under low vacuum condition for several days. It is observed that the thickness of polymer layer and the electrical characteristic of OTFTs vary with the condensation time.

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