Application of $Sr_3SiO_5$:Eu yellow phosphor for white light-emitting diodes

  • Park, Joung-Kyu (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim, Chang-Hae (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Park, Hee-Dong (Advanced Materials Division, Korea Research Institute of Chemical Technology)
  • 발행 : 2004.08.23

초록

In order to develop new yellow phosphor that emit efficiently under the 450 - 470 nm excitation range, we have synthesized a $Eu^{2+}$-activated $Sr_3SiO_5$ yellow phosphor and investigated an attempt to develop white LEDs by combining it with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the $Sr_3SiO_5$:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based $Sr_3SiO_5$:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

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