Electrical Effects in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP)

  • Lee, Dong-Hyun (Dept. of Molecular Electronic Engineering & Center for Organic Materials and Information Devices (COMID), Hongik Univ.) ;
  • Pyo, Sang-Woo (Center for Organic Materials and Information Devices, Hongik Univ., Dept. of Electrical Information & Control Eng., Hongik Univ.) ;
  • Koo, Ja-Ryong (Center for Organic Materials and Information Devices, Hongik Univ., Dept. of Electrical Information & Control Eng., Hongik Univ.) ;
  • Kim, Jun-Ho (Center for Organic Materials and Information Devices, Hongik Univ., Dept. of Electronic Eng Hongik Univ.) ;
  • Shim, Jae-Hoon (Center for Organic Materials and Information Devices, Hongik Univ.) ;
  • Kim, Young-Kwan (Center for Organic Materials and Information Devices, Hongik Univ., Dept. of Chemical Eng Hongik Univ.)
  • 발행 : 2004.08.23

초록

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

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