한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Effect of Rapid Thermal Annealing on Growth and Field Emission Characteristics of Carbon Nanotubes

  • Ko, Sung-Woo (Dept. of Electronics Eng, Sejong University) ;
  • Shin, Hyung-Cheol (Inter-University Semiconductor Research center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Jun, Pil-Goo (Dept. of Electronics Eng, Sejong University) ;
  • Kwak, Byung-Hwak (Dept. of Electronics Eng, Sejong University) ;
  • Noh, Hyung-Wook (Dept. of Electronics Eng, Sejong University) ;
  • Uh, Hyung-Soo (Dept. of Electronics Eng, Sejong University)
  • 발행 : 2004.08.23
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초록

The effect of rapid thermal annealing (RTA) treatment on the growth characteristics of CNTs was investigated. We observed that Ni catalyst film was agglomerated by RTA treatment, resulting in the formation of Ni nanoparticles. The well aligned CNTs were grown from the Ni nanoparticles by plasma enhanced chemical vapor deposition (PECVD). It is shown that the size and distribution of the nanoparticles depend mainly on the annealing temperature and initial thickness of the metal layer. Also, it was found that CNTs grown through optimal RTA treatment had the more improved field emission characteristics than those of as-grown CNTs.

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