대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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- Pages.343-347
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- 2004
Measurement of Interface Trapped Charge Densities $(D_{it})$ in 6H-SiC MOS Capacitors
- Lee Jang Hee (School of Elecronic and Computer Engineering, Chungbuk National University) ;
- Na Keeyeol (School of Elecronic and Computer Engineering, Chungbuk National University) ;
- Kim Kwang-Ho (Dept of Semiconductor Engineering, Chongju University) ;
- Lee Hyung Gyoo (School of Elecronic and Computer Engineering, Chungbuk National University) ;
- Kim Yeong-Seuk (School of Elecronic and Computer Engineering, Chungbuk National University)
- 발행 : 2004.08.01
초록
High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dryreoxidation. Gate oxidation and Ar anneal temperature was
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