한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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- Pages.731-734
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- 2004
패드 컨디셔닝시 온도조절을 통한 산화막 CMP 최적화
Optimization Of CMP for $SiO_2$ Thin Film with a Control of Temperature in Pad Conditioning Process
- 최권우 (조선대 전기공학과) ;
- 박성우 (대불대 전기전자공학과) ;
- 김남훈 (조선대 에너지자원신기술연구소) ;
- 장의구 (중앙대 전자전기공학부) ;
- 서용진 (대불대 전기전자공학과) ;
- 이우선 (조선대 전기공학과)
- Choi, Gwon-Woo (Chosun Univ.) ;
- Park, Sung-Woo (Daebul Univ.) ;
- Kim, Nam-Hoon (Chosun Univ. RIERT) ;
- Chang, Eui-Goo (Chung-Ang Univ.) ;
- Seo, Yong-Jin (Daebul Univ.) ;
- Lee, Woo-Sun (Chosun Univ.)
- 발행 : 2004.11.11
초록
As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. Polishing pads play a key role in CMP, which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. It is investigated the performance of