한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
- /
- Pages.715-718
- /
- 2004
CMP 패드의 Groove 특성
The Characteristics of CMP Polishing Pad
- 김철복 (동성A&T주식회사) ;
- 박성우 (대불대학교 전기전자공학과) ;
- 김상용 ((주)동부 아남 반도체) ;
- 이우선 (조선대학교 전기공학과) ;
-
장의구
(중앙대학교 전자전기공학부)
;
- 서용진 (동성A&T주식회사)
- Kim, Chul-Bok (Dong-Sung A&T) ;
- Park, Sung-Woo (Daebul University) ;
- Kim, Sang-Yong (Dongbu-Anam Semiconductor) ;
- Lee, Woo-Sun (Chosun Univ.) ;
-
Chang, Eui-Goo
(Chung-Ang Univ.)
;
- Seo, Yong-Jin (Dong-Sung A&T)
- 발행 : 2004.11.11
초록
In this paper, we studied the characteristics of new polishing pad, which can apply W-CMP process for global planarization of multi-level interconnection structure. The hardness and density were measured as a function of groove pattern. Also, we compared the pore size through the SEM photograph. Finally, we investigated the CMP characteristics with five different kind of groove pattern sample. Through the above results, we can select optimum groove pattern, so we can expect to begin home product of polishing pad.