Humidity-Sensitive Properties of Vanadium Oxide Thin Films on Sputtering Conditions

스퍼터링 조건에 따른 바나듐 산화막의 감습 특성

  • 이승철 (공주대학교 정보통신공학부) ;
  • 최복길 (공주대학교 정보통신공학부) ;
  • 최창규 (서울산업대학교 전기공학과) ;
  • 권광호 (한서대학교 전자공학과)
  • Published : 2004.11.11

Abstract

Vanadium oxides have been widely used in a variety of technological applications such electrochromic devices as infrared detectors and are expected as a material suitable for gas sensing applications. Thin films of Vanadium oxide (VOx) have been deposited by r.f magnetron sputtering under different oxygen partial pressure ratios and substrate temperatures. Humidity-sensitive properties of resistive sensors having interdigitated electrode structure are characterized. Our sensors show good response to humidity over 20%RH to 80%RH. Vanadium oxide films deposited with 0% $O_2$ partial pressure at foot exhibit greater sensitivity to humidity change than others.

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