한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
- /
- Pages.210-213
- /
- 2004
비정질 $Ge_2Sb_2Te_5$ 박막의 상변화에 따른 전기적 특성 연구
The electrical properties and phase transition characteristics of amorphous $Ge_2Sb_2Te_5$ thin film
- Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
-
Shin, Kyung
(Department of Electronic Materials Engineering, Kwangwoon University) ;
-
Chung, Hong-Bay
(Department of Electronic Materials Engineering, Kwangwoon University)
- 발행 : 2004.11.11
초록
The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.