한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

비정질 $Ge_2Sb_2Te_5$ 박막의 상변화에 따른 전기적 특성 연구

The electrical properties and phase transition characteristics of amorphous $Ge_2Sb_2Te_5$ thin film

  • 양성준 (광운대학교 전자재료공학과) ;
  • 이재민 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • 발행 : 2004.11.11
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

키워드