Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
- /
- Pages.405-408
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- 2004
Voltage-Current Modeling of NPT IGBT for Transient Condition
과도 상태 시 NPT IGBT의 전압-전류 모델링
- Ryu, Se-Hwan (Konkuk University) ;
- Lee, Myung-Soo (ATS) ;
-
Ahn, Hyung-Geun
(Konkuk University)
;
-
Han, Deuk-Young
(Konkuk University)
- Published : 2004.07.05
Abstract
In this work, Analytical model for voltage and current characteristics of NPT(Non-PunchThrough) IGBT(Insulated Gate Bipolar Transistor) was represented. voltage and current characteristics models were based on prediction on power loss of NPT IGBT during transient condition. For Analytical current model, excess carrier concentration and accumulated charge in active base width was analyzed with time variance. Analytical models were simulated by varying lifetime of excess minority carrier.