한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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- Pages.369-372
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- 2004
Bi-CMOS공정중 SSR 채널 형성을 위한 $Sb_2O_3$ 빔튜닝 방법 연구
A Study of $Sb_2O_3$ Beam Tuning for SSR Channel on Bi-CMOS Process
- Choi, Min-Ho (Chung-Ang University) ;
- Kim, Nam-Hoon (Chung-Ang University) ;
- Kim, Sang-Yong (DongbuAnam Semiconductor) ;
- Chang, Eui-Goo (Chung-Ang University)
- 발행 : 2004.07.05
초록
The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using