Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.365-368
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- 2004
Electrical characteristics of the multi-result MOSFET
Multi result MOSFET의 에피층 농도에 따른 전기적 특성분석
- Kim, Hyoung-Woo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
- Kim, Sang-Cheol (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
- S대, Kil-Soo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
- Kim, Eun-Dong (Korea Electrotechnology Research Institute, Power Semiconductor Group)
- 김형우 (한국전기연구원 전력반도체연구그룹) ;
- 김상철 (한국전기연구원 전력반도체연구그룹) ;
- 서길수 (한국전기연구원 전력반도체연구그룹) ;
- 김은동 (한국전기연구원 전력반도체연구그룹)
- Published : 2004.07.05
Abstract
Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from