한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

산화제 첨가에 따른 $WO_3$ 박막의 CMP 특성

Characteristic of Addition Oxidizer on the $WO_3$ Thin Film CMP

  • 이우선 (조선대학교 전기공학과) ;
  • 고필주 (조선대학교 전기공학과) ;
  • 최권우 (조선대학교 전기공학과) ;
  • 김태완 (조선대학교 전기공학과) ;
  • 최창주 (조선대학교 전기공학과) ;
  • 오금곤 (조선대학교 전기공학과) ;
  • 서용진 (대불대학교 전기전자공학과)
  • 발행 : 2004.07.05
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초록

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

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