Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Nanotopography Simulation of Shallow Trench Isolation Chemical Mechanical Polishing Using Nano Ceria Slurry

나노 세리아 슬러리를 이용한 STI CMP에서 나노토포그라피 시뮬레이션

  • Kim, Min-Seok (Nano-SOI Process Laboratory, Hanyang University) ;
  • Katoh, Takeo (Nano-SOI Process Laboratory, Hanyang University) ;
  • Kang, Hyun-Goo (Nano-SOI Process Laboratory, Hanyang University) ;
  • Park, Jea-Gun (Nano-SOI Process Laboratory, Hanyang University) ;
  • Paik, Un-Gyu (Department of Ceramic Engineering, Hanyang University)
  • 김민석 (한양대학교 Nano-SOI 공정 연구실) ;
  • ;
  • 강현구 (한양대학교 Nano-SOI 공정 연구실) ;
  • 박재근 (한양대학교 Nano-SOI 공정 연구실) ;
  • 백운규 (한양대학교 세라믹 공학과)
  • Published : 2004.07.05
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Abstract

We investigated the nanotopography impact on the post-chemical mechanical polishing (post-CMP) oxide thickness deviation(OTD) of ceria slurry with a surfactant. Not only the surfactant but also the slurry abrasive size influenced the nanotopography impact. The magnitude of the post-CMP OTD increased with adding the surfactant in the case of smaller abrasives, but it did not increase in the case of larger abrasives, while the magnitudes of the nanotopography heights are all similar. We created a one-dimensional numercal simulation of the nanotopography impact by taking account of the non-Prestonian behavior of the slurry, and good agreement with experiment results was obtained.

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