Preparation of ITO thin films by FTS(Facing Targets Sputtering) method

FTS법을 이용한 ITO박막의 제작

In this study the ITO thin films were prepared by using FTS(Facing Targets Sputtering) system. The electric characteristics, transmittance, surface roughness of ITO thin films were investigated as a function of varying input current and working gas pressure at room temperature. As a result, the ITO thin film was fabricated with resistivity $6{\times}10^{-4}[\Omega{\cdot}cm]$, carrier mobility $52.11[cm^2/V{\cdot}sec]$, carrier concentration $1.72{\times}10^{20}[cm^{-3}]$ of ITO thin film at working pressure 1mTorr and input current 0.6A.