Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics and Processing Effects Of $HfO_2$ Thin Films grown by Metal-Organic Molecular Beam Epitaxy

금속 유기 분자 빔 에피택시로 성장시킨 $HfO_2$ 박막의 특성과 공정변수가 박막의 성장 및 특성에 미치는 영향

  • Kim, Myoung-Seok (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Ko, Young-Don (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Nam, Tae-Hyoung (Dept. of Material Science and Engineering, Yonsei University) ;
  • Jeong, Min-Chang (Dept. of Material Science and Engineering, Yonsei University) ;
  • Myoung, Jae-Min (Dept. of Material Science and Engineering, Yonsei University) ;
  • Yun, Il-Gu (Dept. of Electrical and Electronic Engineering, Yonsei University)
  • 김명석 (연세대학교 전기전자공학과) ;
  • 고영돈 (연세대학교 전기전자공학과) ;
  • 남태형 (연세대학교 금속 시스템 공학과) ;
  • 정민창 (연세대학교 금속 시스템 공학과) ;
  • 명재민 (연세대학교 금속 시스템 공학과) ;
  • 윤일구 (연세대학교 전기전자공학과)
  • Published : 2004.07.05
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Abstract

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

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