Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.52-55
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- 2004
Electrical Characteristics of GaAs MESFET's Considering Channel Charge
GaAs MESFET의 채널전하에 의한 전기적 특성해석
- Won, Chang-Sub (Konkuk Uni.) ;
- Yu, Young-Han (Hanyeong college) ;
- Lee, Yong-Kuk (Konkuk Uni.) ;
-
Ahn, Hyung-Keun
(Konkuk Uni.)
;
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Han, Deuk-Young
(Konkuk Uni.)
- Published : 2004.07.05
Abstract
In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current salutation. When electron velocity is saturated, deletion layer is stil open channel and it play a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.