Dielectric, Electrical Properties of $TiO_2-SnO_2$ Thin Films Fabricated using Sol-Gel Method

솔젤법에 의해 제작된 $TiO_2-SnO_2$ 박막의 유전적, 전기적 특성

  • Published : 2004.11.05

Abstract

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\circ}C$.

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